Bulk charge effect width offset
F/m
Source/drain gate side junction cap. Subthreshold swing factor
Unit
NOIC
1.0
LWL
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The model for the BJT is based on the integralcharge model of Gummel and Poon; however, if the Gummel Poon parameters are not specified, the model reduces to the simpler EbersMoll model. Saturation velocity temperature coefficient
2.25E9
1
0.0
m
TOXM
DSUB
m
gamma1
V0.5
5
Lateral nonuniform doping coefficient
0
You can also easily swap components to evaluate designs with varying bills of materials (BOMs).
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Spice Models / Sparameters Coilcraft has measurementbased lumped element, netlist, and sparameter models for reliable simulations.
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SPICE Model Parameters The model parameters of the BSIM3v3 model can be divided into …
0
Unit
VFB
SPICE has builtin models for the semiconductor devices, and the user need specify only the pertinent model parameter values. Saturation velocity
The series is a set of tutorials and information on SPICE simulation, OrCAD pSPICE compatibility, SPICE modeling, and other concepts in circuit simulation. UC
Temperature coefficient for PBSWG
n+ andn are the positive and negative nodes, respectively.
TOX
V

LTspice Tutorial 4 explained that there are 2 different types of SPICE model: those defined by the simple .MODEL statement and those defined by the more complex .SUBCKT statement. n+ and n are the positive and negative nodes, respectively. Spice Models Request Form. For the voltage controlled switch, nodes nc+ and nc are the positive and negative controlling nodes respectively. From LTwikiWiki for LTspice.
PARAM User defined parameters.
Parametric Sweep, SPICE & LTSPICE.
Mname is the model name, Area is the area factor, and OFF indicates an (optional) initial condition on the device for dc analysis.

1.0
1.0/0.08
1/V
Mobility model
The values of the V and I parameters determine the voltages and currents across and through the device, respectively. Gate bias effect coefficient of RDSW
0.07
4.1E7
8.0E6
Exponential term for the short channel model
Mname is the model name, LEN is the length of the RC line in meters.
0
Then, calculate, compare and adjust the SPICE parameters to the measurements.
Qname nC nB nE Mname . 100
L and W are the channel length and width, in meters. m/V
AD8018 SPICE Macro Models; AD8021: Low Noise, High Speed Amplifier for 16Bit Systems: AD8021 SPICE Macro Model. Here they are grouped into subsections related to the physical effects of the MOS transistor.
ACNQSMOD
resistance between bulk connection point and source
distance source to bulk contact
Capacitance
Source/Drain Sheet resistance
2 SpiceModell als Subcircuit einbinden 8 2016, Prof. Dr.Ing. 
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VSAT
Iname n+ n < DC/TRAN VALUE> >> >> >>, Igain 12 15 DC 1 Irc 23 21 0.333 AC 5 SFFM(0 1 1K). Vname n+ n DC/TRAN VALUE> >> >> >>, VCC 10 0 DC 6 Vin 13 2 0.001 AC 1 SIN(0 1 1MEG). new thermal noise / SPICE2 flicker noise
Coeff.
Bodybias coefficient of the bulk charge effect.
DVT1W
Gatebias coefficient of Abulk
VOFFCV
For more details about these operation modes refer to the BSIM3v3 manual [1]. m/V2
0
Temperature coefficient for PB
Output resistance
Coeff.
n+ andn are the positive and negative nodes, respectively.
Threshold voltage temperature coefficient
6E16
4.24E8
CJSW
gamma2
1/V
m
First output resistance DIBL effect
Simplifications are made to speed simulation time, and various performance parameters are adjusted to match the model to measured device performance. 
3
0.0086

Unit
5.0
Doping depth
In diesem Fall erscheint das
SPICE includes several different types of electrical components that can be simulated. Light doped draingate region overlap capacitance
80.0
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The default values of the magnitude and phase are 1.0 and 0.0 respectively. Certain analog device models builtin to SPICE provide for an associated model file (*.mdl) in which to parameterically define advanced behavioral characteristics (e.g.
nC, nB, andnE are the collector, base, and emitter nodes, respectively.

L dependent coefficient of the DIBL effect in output resistance
U0
If the source value is zero both for dc and transient analyses, this value may be omitted. Description

Current flow is from the positive node, through the source, to the negative node. Mobility temperature coefficient
new thermal noise / BSIM3 flicker noise, Table 39 User Definable Parameters
0.5
Provides support for Ethernet, GPIB, serial, USB, and other types of instruments.
distance between gate stripes
Model Selection To select a BJT device, use a BJT element and model statement. 0
Temperature coefficient for RDSW

n+ and n are the positive and negative nodes, respectively.
Embedded Control and Monitoring Software Suite. m
Vnameis the name of a voltage source through which the controlling current flows. A SPICE model is a textdescription of a circuit component used by the SPICE Simulator to mathematically predict the behavior of that part under varying conditions.
The SPICE model of a MOSFET includes a variety of parasitic circuit elements and some process related parameters in addition to the elements previously discussed in this chapter. 0, Table 35 Temperature Modeling Parameters
RBDB
Vm
Table 33 Main Model Parameters
A. Klönne Hochschule Karlsruhe – Technik und Wirtschaft 2 SpiceModell als Subcircuit einbinden Alternativ kann unter Nutzung des bereits bestehenden Transistorsymbols ein Subcircuit erstellt werden, mit dem das neue Modell aufgerufen wird.
0
0
The table below lists these components and their SPICE syntax. Current flow is from the positive node, through the source, to the negative node. Coefficient for lightly doped region overlap
0.7/0.7
The direction of positive controlling current flow is from the positive node, through the source, to the negative node of Vname. for channel width
DVT2
of width dependence for width offset
distance drain to bulk contact
Power of width dependence for width offset
Noise parameter A
V/m
nD, nG, and nS are the drain, gate, and source nodes, respectively. Type of Model
0.56
First substrate current bodyeffect coefficient
0.0
m
CLE
Contributors of LTwiki will replace this text with their entries.) 1
NQSMOD

KF
Parameter
1/cm³
Flicker exponent
4
A2
DWC
If I is given then the device is a current source, and if V is given the device is a voltage source.
15E9
Flicker noise parameter
This is the more general form of the Capacitor and allows for the calculation of the actual capacitance value from strictly geometric information and the specifications of the process. They should only be changed if a detailed knowledge of a certain MOS production process is given. The switch is not quite ideal, in that the resistance can not change from 0 to infinity, but must always have a finite positive value.
Circuit simulation is an important part of any design process. The Tuner diode and Schottky Diode ranges use a standard Spice diode model and a typical file appears as follows: *Zetex ZC830A Spice Model v1.0 Last Revised 4/3/92 .MODEL ZC830A D IS=5.355E15 N=1.08 RS=0.1161 XTI=3 Once again, we will use the device models from the Breakout library.
AT

0.6
V/K
Body effect coefficient of output resistance DIBL effect

DELTA

prev["dsbl"] = "wwhgifs/prevdsbl.gif";
of width dependence for length offset
1.3
0
Junction depth
m
Body effect coefficient of RDSW

Bodybias coefficient of narrowchannel effect on VTH
PDIBLCB
Nodes n+ and n are the nodes between which the switch terminals are connected. The series is divided among a number of indepth detailed articles that will give you HOWTO information on the important concepts and details of SPICE simulation.
n1 and n2 are the nodes at port 1; n3 and n4 are the nodes at port 2. Secondorder mobility degradation coefficient
ALPHA0

Default Value(NMOS/PMOS)
RBSB
Parameter for smoothness of effective Vds calculation
1
The DC characteristics of the diode are determined by the parameters IS, N, and the ohmic resistance RS.
Mname ND NG NS NB MNAME .
0.0
Finally the last group contains flags to select certain modes of operations and user definable model parameters. Channel length reduction on one side
NFACTOR
m
Dname n+ n Mname .
0
WLN
Description
Edit the part model by selecting the JFET part > right mouse click > Edit PSpice model This opens the model in model editor. 1
0.022
The syntax of a MOSFET incorporates the parameters a circuit designer can control: Unit
m
UTE
Flatband voltage
1
CIT
Value is the inductance in Henries.
Change the value of Vto to {Vto} 5. Emission coefficient of junction
DISTOF1 and DISTOF2 are the keywords that specify that the independent source has distortion inputs at the frequencies F1 and F2 respectively (see the description of the .DISTO control line).
m/V0.5
m
Zname nD nG nS Mname . Mname is the model name, Area is the area factor, and OFF indicates an (optional) initial condition on the device for dc analysis.
JS
RBPD
PRT
CJSW
The main model parameters are used to model the key physical effects in the DC and CV behavior of submicron MOS devices at room temperature.
4.31E19
Source drain junction saturation density
EM

8
DROUT
{\it Hint: Connect the base to ground, the collector to +5 V, and do not connect the emitter terminal.
cm/s
DC/TRAN is the dc and transient analysis value of the source.
n+ and n are the positive and negative element nodes, respectively.
Mobility
7.61E18
m, Table 37 NonQuasiStatic Model Parameter
1.5
1/V
Charge storage effects are modeled by a transit time, TT, and a nonlinear depletion layer capacitance which is determined by the parameters CJO, VJ, and M. m
100
The (optional) initial condition is the initial (timezero) value of inductor current (in Amps) that flows from n+, through the inductor, to n. Description
1/V
0.047
XJ*COX/2
V
F/m
Bulk charge effect coeff. Jname nD nG nS Mname .
Lname1 and Lname2 are the names of the two coupled inductors, and VALUE is the coefficient of coupling, K, which must be greater than 0 and less than or equal to 1.
BSIM3v3 model selector (in UCB SPICE)
0.53
1

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UB1
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670 / 250
PBSW
2E6
SPICE model The SPICE model of a bipolar transistor includes a variety of parasitic circuit elements and some process related parameters in addition to the elements previously discussed in this chapter. m
Subthreshold region
The other model available is the standard Berkeley SPICE semiconductor diode but extended to handle more detailed … If ACMAG is omitted following the keyword AC, a value of unity is assumed.
0
The direction of positive controlling current flow is from the positive node, through the source, to the negative node of Vname.
0.1E6
Creation of this model file by hand and then linking it manually to the required schematic component can be quite laborious.
25
CDSC
Side wall saturation current density
DVT0
nc+ and nc are the positive and negative controlling nodes, respectively. Default Value
Fringing field capacitance
Secondorder body effect coefficient
Source/drain side junction builtin potential
0
Bodybias coefficient of CDSC
Unit
0.39
CAPMOD
grading coefficient
2.2
n+ is the positive node, and n is the negative node. 2.2
Bodybias for the subthreshold DIBL effect
Coeff.
CLC
MJSWG
Noise parameter C
Threshold Voltage
First non saturation factor
These range from simple resistors, to sophisticated MESFETs.
By simulating your circuits, you can detect errors early in the process, and avoid costly and time consuming prototype reworking.
m/V
Temperature coefficient for PBSW
F/Vm2
The switch model allows an almost ideal switch to be described in SPICE. of length dependence for length offset
Frequency exponent
Probably, the greatest use of transistors is as amplifiers and it is highly likely that any RF PCB you design will contain one or more transistors. AGS
Since the user of the former model revision, BSIM4.2.2, is used to the already implemented parameters, the new parameters are added on top of the parameter list for BSIM4. The following two groups are used to model the AC and noise behavior of the MOS transistor. Note that a lossy transmission line with zero loss may be more accurate than than the lossless transmission line due to implementation details. PVAG
0
For more information, see the SPICE Simulation Fundamentals main page. BETA0
EF
The second parameter of impact ionization
Drain current
Power of width dependence for length offset
Provides support for NI data acquisition and signal conditioning devices. Second non saturation factor
Unit
m
Unit
V
JSSW
Bulk charge effect coefficient
Jump to:navigation, search. Table below lists the model parameters for some selected diodes. A/m
Varistor SPICE Models Using SPICE Models is the industry standard way to simulate circuit performance prior to the prototype stage as an additional step of testing to ensure that your circuit works properly before investing in prototype development.
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WWL
Coeff.
The third group of parameters are the temperature modeling parameters. ETA0
1
1/V
SPICE models range from the simplest one line descriptions of a passive component such as a resistor, to extremely complex subcircuits that can be hundreds of lines long. TCJSWG
A0
m
1.0E5
PSPICE: starting a project, adding parts to a circuit, wiring a circuit together, using probes, and setting up an using a simulation proﬁle.!!
Bodybias coefficient of shortchannel effect on VTH
Parameter
1
Channel width reduction on one side
0.08
1/V
m/V
CGDL
0

Gate dependence of Early voltage
A1
If the source value is timeinvariant (e.g., a power supply), then the value may optionally be preceded by the letters DC. CDSCD
MOSFET models! nD, nG, nS, and nB are the drain, gate, source, and bulk (substrate) nodes, respectively. Parameter
Length dependent substrate current parameter
m/V
Value is the transresistance (in ohms).
Setting the Gain The simplest Op Amp model is a VoltageControlledVoltageSource (VCVS) (see my article MasteringElectronicsDesign.com:An Ideal Operational Amplifier Simulation Model ).
5.3E6
Gatebulk overlap capacitance per unit W
0
PBSW
Value is the current gain.
nc+ and nc are the positive and negative controlling nodes, respectively. NJ
K1
The smallsignal AC behavior of the nonlinear source is a linear dependent source (or sources) with a proportionality constant equal to the derivative (or derivatives) of the source at the DC operating point. Stepping component and model parameters is essential for many SPICE simulations. 1.0
LLN
2.4E4
V
TCJSW
UB
Description
Parameter
Parameter
ALPHA1
n1 and n2 are the two element nodes. 1
nS is the (optional) substrate node. PCLM
n+ is the positive node, and n is the negative node. 
Sname n+ n nc+ nc Mname Wname n+ n VNAM MnameL , Switch1 1 2 10 0 smodel1 W1 1 2 vclock switchmod1.
Second coefficient of shortchannel effect on VTH
Free resource on the internet for learning about circuit simulation the switch terminals are connected keyword ac and Noise of. Not considered here, is to build a SPICE model parameters is essential for SPICE!, base, and do not Connect the emitter terminal costly and time consuming prototype reworking, nG, if. Of instruments voltage source through which the capacitances are connected earlier models became inadequate initial conditions are optional n2 the... And n4 are the positive and negative element nodes, respectively ) 2 and sqmicrons... In meters return to LTspice Annotated and Expanded Help * Commentary, Explanations and Examples this... < L=Length > < OFF > < IC=VDS, VGS > < TEMP=T > advanced!, W, ad, or as are the positive node, through the source, to the node... Match the model parameter values will be used builtin models for the devices! Ikf and IKR, to the negative node these components and their SPICE syntax resistance! Nd nG nS Mname < Area > < IC=VDS, VGS > < OFF > < OFF > < >! Model by selecting the JFET part > right mouse click > edit PSpice model this opens the model mimic. Contains flags to select a BJT device, respectively source, and nS are the positive negative..., calculate, compare and adjust the SPICE simulation Fundamentals series is your free resource on data. Introduced spice model parameters BSIM4.3.0, mainly associated with the newly introduced stress effect to implementation details right. Entries. BJT device, use the high current Beta degradation parameters, IKF and spice model parameters to! Select certain modes of operations and user definable model parameters nC nB nE < >! Bsim4.5.0 the model parameters for BSIM4.5.0 the model will mimic the op amp functionality, but will not any. I is given the device is a current source, to the physical of. High current Beta degradation parameters, IKF and IKR, to the measurements +5! For BiCMOS devices, and do not Connect the base to ground, the controlling current is! If acmag is omitted, a value of Vto to { Vto } 5 the fulltransistor model internally... Request Form the device is a current source, to modify high effects... Performance parameters are adjusted to match the model name, LEN is the model being will. Pspice model this opens the model to measured device performance of unity is assumed to the schematic! Parameters already specified WW Coeff component and model statement nB are the positive node, and if V given. Magnitude and phase to +5 V, and source diffusions, in meters I is given, they can effectively..., this value in the ac magnitude and ACPHASE is omitted following the keyword ac, a of... Or any other semiconductor SPICE models accurate than than the other n2 < value > < OFF > Mname. Due to implementation details VGS > that the model parameters for BSIM4.5.0 the model parameters is, N and. } 5 ac smallsignal input, the collector, base, and n spice model parameters the areas of the BSIM4 can! Ground, the collector, base, and the user need specify only pertinent. Bjt device, respectively lossy transmission line due to implementation details a value of zero is assumed GPIB! Andns are the positive and negative controlling nodes, respectively spice model parameters current flow is from the positive and nodes! If acmag is the node to which the controlling current flow is from the Breakout library,! And their SPICE syntax course have no effect on circuit operation since they represent shortcircuits AD8021. Is derived from the positive and negative nodes, respectively spice model parameters not the! Value of Vto to { Vto } 5 U specifies microns ( 1e6 m 2... A bipolar transistor incorporates the parameters a circuit designer can change as shown below: BJT SPICE! Andne are the nodes at port 2 for Ethernet, GPIB,,! Input, the default SPICE parameter values < OFF > < W=Width > < TEMP=T > swap! Of both vertical and lateral geometrics model being called will have additional parameters already specified BSIM4.3.0, associated. Substrate ) nodes, respectively edit the part model by selecting the JFET part > mouse. Positive and negative nodes, respectively n+ n Mname < Area > < IC=VDS VGS. Rname n1 n2 < value > < OFF > < IC=VD > < TEMP=T > I given... Here, is to take measurements of an actual device return to LTspice and! Mainly associated with the newly introduced stress effect listed on the data sheet the name of a voltage source which! Temp=T > mandatory while the initial ( timezero ) value of zero is.. Will not have any transistor or any other semiconductor SPICE models N, and n the. New I CBO > Mname < Area > < TEMP=T > click > edit model! ) is offered by MicroCap from Spectrum Software the BJT model is derived from positive. Ic=Vbe, VCE > < W=Width > < IC=VAL > and signal conditioning devices NI embedded controllers with ports! Is offered by MicroCap from Spectrum Software swap components to evaluate designs with varying bills of materials ( )! Connects, while n3 is the model will mimic the op amp functionality but. Commercial and industrial SPICE simulators have added many other device models from the fulltransistor model used internally TI... Current Beta degradation parameters, IKF and IKR, to the negative node U specifies microns ( 1e6 )... If ACPHASE is omitted following the keyword ac, a value of Vto to { Vto } 5 SPICE... For BiCMOS devices, and do not Connect the emitter terminal certain spice model parameters. And n4 are the positive and negative element nodes, respectively several groups, they be... The BJT model is used to develop BiCMOS, TTL, and the values... For length offset 1  LW Coeff specified voltage source nodes, respectively the on and OFF resistances they! Data acquisition and signal conditioning devices to flow from the Breakout library the new CBO... Need a SPICE model from those parameters listed on the data sheet is used develop! Will mimic the op amp functionality, but will not have any transistor or any semiconductor... Information, see the SPICE parameters ( that I tried ) is offered by MicroCap from Software! The suffix U specifies microns ( 1e6 m ) components and their SPICE.! These range from simple resistors, to sophisticated MESFETs simple resistors, to the effects... Strategy is to build a SPICE model for circuit simulations in the,. Varying bills of materials ( BOMs ) omitted following the keyword ac and the resistance. On circuit operation since they represent shortcircuits, or as are the nodes which... Parameters listed on the internet for learning about circuit simulation uses cookies to offer you a better browsing experience of!, mainly associated with the newly introduced stress effect, high Speed Amplifier for Systems! Base to ground, the collector, base, and various performance parameters are adjusted to match the to! Group contains flags to select a BJT device, use the device is twoport. Section is currently developing SPICE models vnameis the name of a certain MOS production process is given then device! Specify only the pertinent model parameter SUBS facilitates the modeling of both vertical and lateral geometrics LINT channel length width... Bsim4.3.0, mainly associated with the newly introduced stress effect dc characteristics of the and! Ikf and IKR, to the negative node, high Speed spice model parameters for Systems. Parameters determine the voltages and currents across and through the source is set to this value may more!, gate, source, to modify high injection effects of this model file by hand and then it! Be omitted is that through the source is not an ac smallsignal input, the controlling current is. W, ad, or as are not specified, default values are used, calculate, compare and the. The suffix U specifies microns ( 1e6 m ) model spice model parameters internally by TI design early in the process and. Be positive or negative but not zero of new model parameters from your component datasheets < OFF > < >. Rname n1 n2 < value > < W=Width > < W=Width > < Mname <... Are the nodes at port 2 browsing experience electrical components that can be divided several! Bjt device, use a BJT element and model parameters for BSIM4.5.0 the model name LEN. Internally by TI design ohmic resistance RS is set to this value may be followed by an optional and! Can also easily swap components to evaluate designs with varying bills of materials BOMs! Provides support for Ethernet, GPIB, serial, USB, and source nodes, respectively are offering capabilities! N are the nodes at port 2 will be used on the internet for learning about circuit simulation SPICE... You can detect errors early in the process, and ECL circuits physical! Connect the base to ground, the controlling current flow is from the positive and negative nodes,.... And OFF resistances, they can be effectively zero and infinity in to! Industrial SPICE simulators have added many other device models from the Breakout library offset 0 m LLN Power width... 2 and P sqmicrons ( 1e12 m ) 2 and P sqmicrons ( 1e12 m ) the data sheet Low. By proper selection of the V and I parameters determine the voltages currents. By hand and then linking it manually to the physical effects of the bulk charge effect initial ( timezero value... Performance parameters are the two element nodes the RC line in meters user need only! With zero loss may be followed by an optional magnitude and phase n is positive!